|
Material
Composition
|
Typical Purity
|
Melting Point
C
|
Targets
|
Evap.
Material
|
E-Beam
Starter Source
|
Suggested Applications/
Notes
|
Aluminum
Silicide
AlSi2
|
99.5%
|
|
|
X
|
|
Silicides in general are used
for resistance and semiconducting films. |
Chromium
Silicide
CrSi2, Cr3Si
|
99.5%
|
|
X
|
X
|
X
|
They are currently being used
for fabrication of interconnections and gate electrodes in IC devices,
where stoichiometry and low sodium content are. |
Cobalt Silicide
CoSi2
|
99.5%
|
1277
|
X
|
X
|
X
|
New applications include
metalization for MESFE technology on GaAs; as a base in metal bipolar transistors. |
Hafnium
Silicide
HfSi2
|
99.5%
|
1750
|
X
|
X
|
X
|
As a ring contact to specially
made bipolar transistors. Silicides are being investigated for use
as diffusion barriers in both silicon and III-V devices. |
Iron Silicide
SeSi2
|
99.5%
|
|
X
|
X
|
X
|
Device technology in multilevel
metalization schemes. Decomposes aluminum as a second level. |
Molybdenum
Silicide
MoSi2
|
99.5%
|
|
X
|
X
|
X
|
|
Niboium Silicide
NbSi2
|
99.5%
|
|
X
|
X
|
X
|
|
Tantalum
Silicide
TaSi2, Ti5Si3
|
99.5%
|
|
X
|
X
|
X
|
|
Titanium Silicide
Ti5Si2, Ti5Si3
|
99.5%
|
|
X
|
X
|
X
|
|
Tungsten Silicide
WSi2
|
99.5%
|
2900
|
X
|
X
|
X
|
|
Vanadium
Silicide
VSi2, V3Si
|
99.5%
|
|
X
|
X
|
X
|
|
Zirconium Silicide
ZrS2
|
99.5
|
|
X
|
X
|
X
|
|
