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Nitrides
A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z
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Material
Composition
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Typical
Purity
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Melting Point
C
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Density
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Targets
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Evap.
Material
|
E-Beam
Starter
Source
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SUGGESTED APPLICATIONS/ APPLICATION NOTES
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Aluminum
Nitride
AlN
|
99%
99.8%
|
2200
|
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X
|
X
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X
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Nitrides in general
show promise of increasing electrical stability of diodes,
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Boron Nitride
BN
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99.9%
|
2300
|
3.26
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X
|
X
|
X
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transistors and integrated
circuits. They are currently being used for
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Hafnium
Nitride
HfN
|
99.5%
|
2852
|
2.25
|
X
|
X
|
X
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fabrication of interconnections
and gate electrodes in IC devices, where stoichiometry
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Niobium Nitride
NbN
|
99.5%
|
2573
|
8.4
|
X
|
X
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X
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and low sodium content
are essential. New applications include
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Silicon
Nitride
Si3N4
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98%
99.9%
|
1900
|
3.44
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X
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X
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X
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metallization for MESFET
technology on GaAs; as a base in metal base bipolar
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Tantalum
Nitride
TaN
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99.5%
|
3360
|
16.30
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X
|
X
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X
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transistors, as a
ring contact to specifically made bipolar transistors. Silicides
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Titanium Nitride
TiN
|
99.5%
|
2930
|
5.22
|
X
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X
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X
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are being investigated
for use in both silicon and III-V device technology in
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Vanadium
Nitride
VN
|
99.5%
|
2320
|
6.13
|
X
|
X
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X
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multilevel metallization
schemes involving aluminum as a second level.
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Zirconium Nitride
ZrN
|
99.5%
|
2980
|
7.09
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X
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X
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X
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| Nitrides in general show promise
of increasing electrical stability of diodes. Transistors and integrated
circuits. They are currently being used for fabrication of
interconnections
and gate electrodes in IC devices, where stoichiometry and low sodium content
are essential. new applications include metallization for MESFET
technology on GaAs; as a base in metal base bipolar transistors.
Silicides are being investigated for use in both silicon and III-V device
technology in multilevel metallization schemes involving aluminum as a
second level. |
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