|
Material
Composition
|
Typical Purity
|
Melting Point
C
|
Targets
|
Evap.
Material
|
E-Beam
Starter Source
|
Suggested Applications/
Notes
|
Boron Carbide
B4C
|
99.5%
|
2350
|
X
|
X
|
X
|
Carbides in general are
used for wear-resistant films and semi-conducting films.
|
Chromium
Carbide
Cr3C2
|
99.5%
|
1890
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
Hafnium
Carbide
HfC
|
99.5%
|
3890
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
Molybdenum
Carbide
Mo2C
|
99.5%
|
2687
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
Silicon
Carbide
SiC
|
99.5%,
99.9%
|
2700
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
Tantalum
Carbide
TaC
|
99.5%
|
3880
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
Titanium Carbide
TiC
|
99.5%
|
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
Tungsten Carbide
WC
|
99.5%
|
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
Vanadium
Carbide
VC
|
99.5%
|
2810
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
Zirconium
Carbide
ZrC
|
99.5%
|
3540
|
X
|
X
|
X
|
Carbides are being investigated
for use as diffusion barriers in both silicon and III-Vdevice technology
in multilevel metalization schemes involving aluminum as a second level.
|
